A Novel High Input Impedance AC-Coupled Buffer
نویسندگان
چکیده
منابع مشابه
Scanning impedance microscopy (SIM): A novel approach for AC transport imaging
Scanning Impedance Microscopy (SIM) is one of the novel scanning probe microscopy (SPM) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (C–V) behavior of the interface and AC transport properties. The SIM is an ordinary AFM equip...
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A new fully differential (FD) low input impedance CMOS current buffer with low voltage, and low power operation is presented. The low input impedance is achieved by remarkable reduction of the input node voltage swing using a novel double feedback scheme. Some advantages of the proposed double feedback scheme over the conventional (either positive or negative) feedback techniques are: lower inp...
متن کاملScanning impedance microscopy (SIM): A novel approach for AC transport imaging
Scanning Impedance Microscopy (SIM) is one of the novel scanning probe microscopy (SPM) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (C–V) behavior of the interface and AC transport properties. The SIM is an ordinary AFM equip...
متن کاملscanning impedance microscopy (sim): a novel approach for ac transport imaging
scanning impedance microscopy (sim) is one of the novel scanning probe microscopy (spm) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (c–v) behavior of the interface and ac transport properties. the sim is an ordinary afm equip...
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A novel ultra-high compliance, low power, very accurate and high output impedance current output stage (COS) with extremely high output current drive capability is proposed in this paper. The principle of operation of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by HSPICE simulation in TSMC 0.18µm CMOS, BSIM3, and Level4...
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ژورنال
عنوان ژورنال: Communications on Applied Electronics
سال: 2016
ISSN: 2394-4714
DOI: 10.5120/cae2016652278